In this presentation, we will explore the latest advancements in ferroelectric devices, which are pivotal in enhancing the capabilities of intelligent computing in the post-Moore era. We'll delve into the material properties and electrical characteristics of cutting-edge oxide and AlScN ferroelectrics, focusing on their applications in high-density storage and computing. The discussion will include innovative demonstrations and thorough evaluations of ferroelectric multi-bit Content Addressable Memory (CAM) cells, dual-gate ferroelectric transistors, ferroelectric mechanical transistors, and ferroelectric reconfigurable devices, all of which are crucial for data-centric computing systems and tasks that require high energy and area efficiency. Furthermore, we'll cover the physical mechanisms behind the recoverable ferroelectric fatigue and its recovery in doped-HfO2, both experimentally and theoretically, to offer essential insights for the development of high-performance ferroelectric-based intelligent computing systems. These strategies in ferroelectric device technology mark a significant step forward in creating more efficient and powerful intelligent computing systems.